Urganch Davlat Universiteti-Razzaqov Alijon Shonazarovich

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Universitet

Razzaqov Alijon Shonazarovich

Fizika, Professor

alijon.razzokov@urdu.uz

+998919999100

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Список публикаций на Google Scholar

Article title	Year
Formation of (Si2) 1-x (GaP) x gradient composition solid solutions during growth from a tin solution-melt AS Razzokov, VV Girzhon, II Shtablavyi Vacuum, 114693,	2025
Оbtaining and Electrophysical Properties of (Ge2) 1–x (GaAs) x Solid Solutions A Razzokov, A Saidov, D Koshchanova, J Razzakov, R Otajonova Semiconductors 59 (8), 853-857,	2025
STUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD A Razzokov, K Eshchanov, A Saidov International Journal of Mathematics and Physics 16 (1), 47-52,	2025
PREPARATION AND ELECTROPHYSICAL STUDY OF VARISONIC SOLID SOLUTIONS (𝑮𝒆𝟐) 𝟏− 𝒙 (𝑮𝒂𝑨𝒔) 𝒙 AS Razzokov, DE Koshchanova, RM Otajonova Рекомендовано до друку Вченою радою Інституту відновлюваної енергетики …,	2025
Morphological Studies of (Ge2) 1-X (ZnSe) X Solid Solutions AS Razzokov, AS Saidov, MA Shonazarova, JA Razzakov, ... East European Journal of Physics, 256-259,	2025
THEORETICAL AND EXPERIMENTAL STUDY OF THE STRUCTURE OF (GE 2) 1–X–Y (GAAS) X (ZNSE) Y SOLID SOLUTION A RAZZOKOV, KHO ESHCHANOV, AS SAIDOV, VV GIRZHON, ... JOURNAL OF PHYSICAL STUDIES 29 (1), 1603,	2025
Structural Features and Electrical Properties of Ge1-xSnх Solid Solutions Grown on Ge, GaAs Substrates AS Razzokov Int. J. Thin. Fil. Sci. Tec 14 (2), 105-109,	2025
Theoretical Evaluation of Silicon Crystal Growth Using Gallium Solvent A Razzokov, K Eshchanov Proceedings of the Pakistan Academy of Sciences: A. Physical and …,	2024
LASER TREATMENT OF TITANIUM ALLOYS. VV GIRZHON, OV SMOLYAKOV, VL GRESHTA, VV YEMELIANCHENKO, ... Progress in Physics of Metals/Uspehi Fiziki Metallov 25 (4),	2024
STUDY OF THE STRUCTURES OF (Ge2)(GaAs) x (ZnSe) y SOLID SOLUTION EPITAXIAL LAYERS A Saidov, A Razzokov, K Eshchanov И ПРИКЛАДНЫЕ ПРОБЛЕМЫ СОВРЕМЕННОЙ ФИЗИКИ FUNDAMENTAL AND APPLIED PROBLEMS …,	2023
Studies of the crystal structure of solid solutions (Sn2) 1− x− y (GaAs) x (ZnSe) y,(GaAs) 1− x (ZnSe) x grown from liquid phase AS Razzokov, AS Saidov, B Allabergenov, B Choi, SI Petrushenko, ... Journal of Crystal Growth 612, 127203,	2023
Investigation of the Surface Structure of Si, Ge, GaAs, GaP by the Method of Ion Bombarding When Growing Solid Solutions from a Liquid Phase AS Razzokov, AS Saidov, UO Kutliev, MK Karimov Int. J. Thin. Fil. Sci. Tec 12 (3), 201-205,	2023
Features of growing Si-and Si1− xGex-single-crystal films from solution-melt based on tin AS Razzokov, AS Saidov, VV Girzhon, OV Smolyakov Journal of Physical Studies 26 (4), 4601-4605,	2022
Analysis of structure formation processes features in high-entropy alloys of Al-Co-Cr-Fe-Ni system during laser alloying VV Girzhon, VV Yemelianchenko, OV Smolyakov, AS Razzokov Results in Materials 15, 100311,	2022
Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations A Razzokov, K Eshchanov International Journal of Thermodynamics 25 (3), 41-45,	2022
Obtaining Si--Si1-xGex--(Si1-xGex)1-z(Al1-yGayAs)z --Si1-xGex--(Si1-xGex)1-z(Al1-yGayAs)z Structures from a Tin Solution-Melt in a Single … AS Saidov, A RAZZOKOV, SI Petrushenko, SV Dukarov Acta Physica Polonica: A 142 (2),	2022
Thermodynamic determination of optimal conditions for growing Si1-xGex crystals from a tin solution on a silicon substrate AS RAZZOKOV, KO ESHCHANOV Journal of Metals, Materials and Minerals 32 (2), 83-87,	2022
Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures AS Saidov, AS Razzokov Crystallography Reports 67 (2), 301-305,	2022
Thermodynamic Bases for Obtaining Crystalline Perfect Silicon from Tin-silicon Solution A Razzokov, K Eshchanov International Journal of Thermodynamics, 1-6,	2022
THERMODYNAMIC BASES OF OBTAINING CRYSTALLINE PERFECT SILICON FROM SOLUTION-MELT K Eshchanov, A RAZZOKOV International Multidisciplinary Scientific Journal,	2021
Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si 1–x Ge x AS Saidov, AS Razzokov Siberian Journal of Physics 15 (2), 84-91,	2021
OBTAINING A STRUCTURALLY PERFECT SEMICONDUCTOR SOLID SOLUTION SI1-X GEX WITH SPECIFIED ELECTROPHYSICAL AND PHOTOELECTRIC PROPERTIES AS Razzokov, NZ Khakimov, IY Davletov, KO Eshchanov, AR Matnazarov Scientific-technical journal 24 (5), 51-60,	2020
Вы здесь AS Razzokov, AS Saidov, SI Petrushenko, SV Dukarov
Obtaining Si-Si Ge x-(Si Ge x)(Al Ga y As) z-Si Ge x-(Si Ge x)(Al Ga y As) z Structures from a Tin Solution-Melt in a Single Technological Cycle AS Saidov, AS Razzokov, SI Petrushenko, SV Dukarov
PECULIARITIES OF (Ge2) 0, 02 (ZnSe) 0, 03 (GaAs) 0, 95 SOLID SOLUTIONS PREPARATION AND THEIR PHOTOELECTRIC PROPERTIES A Razzokov, M Sotimova