Urganch Davlat Universiteti-Xalilloyev Mahkam Muxammadsharifovich

Xalilloyev Mahkam Muxammadsharifovich

Fizika, Dotsent

x-mahkam@urdu.uz

+998937414866

Ilmiy qiziqishlar:

Biz haqimizda
Nashrlar

Hodim haqida ma'lumot

Список публикаций на Google Scholar

Article title	Year
Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization M Balasubbareddy, K Sivasankaran, AE Atamuratov, MM Khalilloev Journal of Computational Electronics 24 (5), 144,	2025
Self-Heating Effects in Nanoscale MOSFETs A Yusupov, A Atamuratov, M Khalilloev IntechOpen,	2025
Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet A Atamuratov, I Karimov, M Foziljonov, A Abdikarimov, O Atamuratov, ... East European Journal of Physics, 357-364,	2025
Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET MM Khalilloev, BO Jabbarova, F Eshchanov, AE Atamuratov East European Journal of Physics, 253-356,	2025
Investigation of the Behavior of Nickel Impurity Atoms in the Silicon Lattice Based on First Principles BK Ismaylov, KA Ismailov, NF Zikrillaev, AE Atamuratov, SV Koveshnikov, ... East European Journal of Physics, 442-448,	2025
Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET AE Atamuratov, BO Jabbarova, MM Khalilloev, DR Rajapov, A Yusupov, ... Micro and Nanostructures 197, 208015,	2025
Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET A Atamuratov, B Jabbarova, M Khalilloev, A Yusupov, K Sivasankaran IEEE 25th International Conference of Young Professionals in Electron …,	2024
Simulation study of short channel effects in junctionless SOI MOSFETS M Khalilloev arXiv preprint arXiv:2402.14900,	2024
Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs AE Atamuratov, BO Jabbarova, ES Xaitbayev, DR Rajapov, MM Khalilloev arXiv preprint arXiv:2402.10858,	2024
Optimization of vertically stacked nanosheet FET immune to self-heating M Balasubbareddy, K Sivasankaran, AE Atamuratov, MM Khalilloev Micro and Nanostructures 182, 207633,	2023
Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov, ... Наносистемы: физика, химия, математика 13 (2), 148-155,	2022
The self-heating effect in junctionless fin field-effect transistors based on silicon-on-insulator structures with different channel shapes AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov Technical Physics Letters 47 (7), 542-545,	2021
Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov, AG Loureriro 13th Spanish Conference on Electron Devices (CDE), 62-65,	2021
Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape AE Atamuratov, MM Khalilloev, A Yusupov, JC Chedjou, K Kyamakya e-Journal of Surface Science and Nanotechnology 19, 9-12,	2021
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET AE Atamuratov, MM Khalilloev, A Yusupov, AJ García-Loureiro, ... Applied Sciences 10 (15), 5327,	2020
The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET M.M.Khalilloeva, B.O.Jabbarova, A.A.Nasirov Technical Physics Letters 45 (1063-7850), pp. 1245–1248.,	2019
Влияние формы канала на амплитуду случайных телеграфных шумов в подпороговой области беспереходного FinFET-транзистора М.M.Халиллоев, Б.О.Жаббарова, А.А.Насиров Письма в ЖТФ 45, вып. 24,	2019
The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET AAN M. M. Khalilloeva*, B. O. Jabbarova Technical Physics Letters 45 (1063-7850), pp. 1245–1248.,	2019
Simulation of DIBL effect and sub-threshold swing in low power junctionless MOSFETs with different geometries M Khalilloev, A Atamuratov, A Yusupov Applied Science, Biofuels & Petroleum Engineering 5, 1,	2018
Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate AE Atamuratov, M Khalilloev, A Abdikarimov, ZA Atamuratova, M Kittler, ... Наносистемы: физика, химия, математика 8 (1),	2017
Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes AE Atamuratov, A Abdikarimov, M Khalilloev, ZA Atamuratova, ... Наносистемы: физика, химия, математика 8 (1),	2017
The lateral capacitance of nanometer mnosfet with a single charge trapped in oxide layeror at SiO2-Si3N4 interfaceat E Atamuratov, UA Aminov, ZA Atamuratova, M Halillaev, A Abdikarimov, ... Наносистемы: физика, химия, математика 6 (6), 837-842,	2015
USING COMSOL MULTIPHYSICS TO STUDY THE EFFECT OF MOSFET GATE DIELECTRIC THICKNESS AND EXTERNAL TEMPERATURE ON ITS OUTPUT CHARACTERISTICS D Rajapov, A Khasanov, E Khaitbayev, M Khalilloev Scientific committee, 108, 0